標題: The Influence of Surface Oxide on the Growth of Metal/Semiconductor Nanowires
作者: Lu, Kuo-Chang
Wu, Wen-Wei
Ouyang, Hao
Lin, Yung-Chen
Huang, Yu
Wang, Chun-Wen
Wu, Zheng-Wei
Huang, Chun-Wei
Chen, Lih J.
Tu, K. N.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Surface oxide;silicide nanowires;nanokinetics;nanoheterostructures;in situ TEM;molecular dynamics simulations
公開日期: 1-Jul-2011
摘要: We report the critical effects of oxide on the growth of nanostructures through silicide formation. Under an in situ ultrahigh vacuum transmission electron microscope, it is observed from the conversion of Si nanowires into the metallic PtSi grains epitaxially through controlled reactions between lithographically defined Pt pads and Si nanowires. With oxide, instead of contact area, single crystal PtSi grains start forming either near the center between two adjacent pads or from the ends of Si nanowires, resulting in the heterostructure formation of Si/PtSi/Si. Without oxide, transformation from Si into PtSi begins at the contact area between them, resulting in the heterostructure formation of PtSi/Si/PtSi. The nanowire heterostructures have an atomically sharp interface with epitaxial relationships of Si(20-2)//PtSi(10-1) and Si[111]//PtSi[111]. Additionally, it has been observed that; the existence of oxide significantly affects not only the growth position but also the growth behavior and the growth rate by two orders of magnitude. Molecular dynamics simulations have been performed to support our experimental results and the proposed growth mechanisms. In addition to fundamental science, the significance of the study matters for future processing techniques in nanotechnology and related applications as well.
URI: http://dx.doi.org/10.1021/nl201037m
http://hdl.handle.net/11536/21903
ISSN: 1530-6984
DOI: 10.1021/nl201037m
期刊: NANO LETTERS
Volume: 11
Issue: 7
起始頁: 2753
結束頁: 2758
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