標題: Nanoindentation-Induced Pop-In Effects in GaN Thin Films
作者: Jian, Sheng-Rui
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: Cathodoluminescence (CL);GaN thin films;nanoindentation;pop-in
公開日期: 1-May-2013
摘要: The nanoindentation-induced pop-in phenomena in GaN thin film are investigated using Berkovich indenters. The formation of dislocation rosettes revealed by cathodoluminescence (CL) spectroscopy is found to closely relate with the pop-in effect displayed in depth-sensitive measurements. Namely, the CL images of the indented spots show well-defined rosette structures consistent with the hexagonal symmetry of GaN, indicating that the distribution of deformation-induced extended defects/dislocations may dramatically affect the CL emission. The use of CL thus may provide an alternative means for studying the near-surface plasticity in other semiconductor thin films, as well.
URI: http://dx.doi.org/10.1109/TNANO.2013.2240313
http://hdl.handle.net/11536/21899
ISSN: 1536-125X
DOI: 10.1109/TNANO.2013.2240313
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 12
Issue: 3
起始頁: 304
結束頁: 308
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