標題: Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
作者: Hai Dang Trinh
Lin, Yueh Chin
Chang, Edward Yi
Lee, Ching-Ting
Wang, Shin-Yuan
Hong Quan Nguyen
Chiu, Yu Sheng
Quang Ho Luc
Chang, Hui-Chen
Lin, Chun-Hsiung
Jang, Simon
Diaz, Carlos H.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al2O3;asymmetrical C-V;atomic layer deposition (ALD);InSb;MOS;post deposition annealing (PDA)
公開日期: 1-May-2013
摘要: The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature > 300 degrees C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.
URI: http://dx.doi.org/10.1109/TED.2013.2254119
http://hdl.handle.net/11536/21890
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2254119
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 5
起始頁: 1555
結束頁: 1560
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