標題: Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition
作者: Ho, Yen-Teng
Chang, Kuo-Shu
Liu, Kou-Chen
Hsieh, Li-Zen
Liang, Mei-Hui
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: CeO2;room temperature epitaxy;PLD;LAO;XPS
公開日期: 1-五月-2013
摘要: The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po-2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po-2 less than 2 x 10(-3) Torr. The best quality of grown film is obtained under Po-2 = 2 x 10(-5) Torr and degraded under Po-2 = 2 x 10(-6) Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100](CeO2)//[110](LAO) and [010](CeO2)//[(1)over-bar10](LAO). No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD.
URI: http://dx.doi.org/10.1002/crat.201300002
http://hdl.handle.net/11536/21889
ISSN: 0232-1300
DOI: 10.1002/crat.201300002
期刊: CRYSTAL RESEARCH AND TECHNOLOGY
Volume: 48
Issue: 5
起始頁: 308
結束頁: 313
顯示於類別:期刊論文


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  1. 000319141300006.pdf