Title: Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
Authors: Fan, Ming-Long
Hu, Vita Pi-Ho
Chen, Yin-Nein
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Random telegraph noise (RTN);tunnel FET (TFET);variability;work function variation (WFV)
Issue Date: 1-Jun-2013
Abstract: This paper analyzes the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations. Significant RTN amplitude (Delta I-D/I-D) is observed for a single acceptor trap near the tunneling junction, whereas a donor trap is found to cause more severe impact over a broader region across the channel region. In addition, several device design parameters that can be used to improve TFET subthreshold characteristics (thinner equivalent oxide thickness or longer L-eff) are found to increase the susceptibility to RTN. Our results indicate that under WFV, TFET exhibits weaker correlation between I-ON and I-OFF than that in the conventional MOSFET counterpart. In the presence of WFV, the RTN amplitude can be enhanced or reduced depending on the type of the trap and the composition/orientation of metal-gate grain.
URI: http://dx.doi.org/10.1109/TED.2013.2258157
http://hdl.handle.net/11536/21859
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2258157
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 6
Begin Page: 2038
End Page: 2044
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