標題: A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature
作者: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-kappa;indium-gallium-zinc oxide (IGZO);thin-film transistor (TFT);TiO2
公開日期: 1-六月-2013
摘要: This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-kappa SiO2/TiO2/SiO2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm(2)/Vs, and good I-ON/I-OFF ratio of 6.7 x 10(5), which have the potential for the application of high-resolution flexible display.
URI: http://dx.doi.org/10.1109/LED.2013.2258455
http://hdl.handle.net/11536/21854
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2258455
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 6
起始頁: 768
結束頁: 770
顯示於類別:期刊論文


文件中的檔案:

  1. 000319460800017.pdf