Title: One-Step Ge/Si Epitaxial Growth
Authors: Wu, Hung-Chi
Lin, Bi-Hsuan
Chen, Huang-Chin
Chen, Po-Chin
Sheu, Hwo-Shuenn
Lin, I-Nan
Chiu, Hsin-Tien
Lee, Chi-Young
應用化學系
Department of Applied Chemistry
Keywords: germanium (Ge);silicon (Si);epitaxial growth;chemical vapor deposition (CVD);one-step growth
Issue Date: 1-Jul-2011
Abstract: Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.
URI: http://dx.doi.org/10.1021/am200310c
http://hdl.handle.net/11536/21836
ISSN: 1944-8244
DOI: 10.1021/am200310c
Journal: ACS APPLIED MATERIALS & INTERFACES
Volume: 3
Issue: 7
Begin Page: 2398
End Page: 2401
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