標題: Elucidating the Physical Property of the InGaN Nanorod Light-Emitting Diode: Large Tunneling Effect
作者: Lee, Ya-Ju
Lee, Chia-Jung
Chen, Chih-Hao
Lu, Tien-Chang
Kuo, Hao-Chung
光電工程學系
Department of Photonics
關鍵字: Light-emitting diode (LED);nanorod;tunneling effect
公開日期: 1-Jul-2011
摘要: The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (I(O) = 2 x 10(-9) A) is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 x 300 mu m(2) (I(O1) = 1 x 10(-25) A; I(O2) = 1 x 10(-14) A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.
URI: http://dx.doi.org/10.1109/JSTQE.2010.2064287
http://hdl.handle.net/11536/21832
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2010.2064287
期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume: 17
Issue: 4
起始頁: 985
結束頁: 989
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