標題: Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates
作者: Chiu, Ching-Hsueh
Tu, Po-Min
Lin, Chien-Chung
Lin, Da-Wei
Li, Zhen-Yu
Chuang, Kai-Lin
Chang, Jet-Rung
Lu, Tien-Chang
Zan, Hsiao-Wen
Chen, Chiang-Yao
Kuo, Hao-Chung
Wang, Shing-Chung
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Light emitting diodes (LEDs);metal-organic chemical vapor deposition (MOCVD);molecular beam epitaxy (MBE);quantum-confined Stark effect (QCSE)
公開日期: 1-七月-2011
摘要: We presented a study of high-performance GaN-based light emitting diodes (LEDs) using a GaN nanopillars (NPs) structure grown on sapphire substrate by integrating RF-plasma molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Nanoscale air voids were clearly observed at the interface between GaN NPs and the overgrown GaN layer by cross-sectional scanning electron microscopy. It can increase the light-extraction efficiency due to additional light scattering. The transmission electron microscopy images suggest the air voids between GaN NPs introduced during nanoscale epitaxial lateral overgrowth of GaN can suppress the threading dislocation density. Moreover, Raman spectrum demonstrated that the strain of the GaN layer grown on GaN NPs was effectively eliminated, resulting in the reduction of quantum-confined Stark effect in InGaN/GaN quantum wells. Consequently, the LEDs fabricated on the GaN NPs template exhibit smaller electroluminescent peak wavelength blue shift and great enhancement of the light output (70% at 20 mA) compared with the conventional LEDs.
URI: http://dx.doi.org/10.1109/JSTQE.2010.2065794
http://hdl.handle.net/11536/21831
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2010.2065794
期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume: 17
Issue: 4
起始頁: 971
結束頁: 978
顯示於類別:期刊論文


文件中的檔案:

  1. 000293755500024.pdf