標題: Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE
作者: Lai, Fang-I
Kuo, Shou-Yi
Chen, Wei-Chun
Lin, Woei-Tyng
Wang, Wei-Lin
Chang, Li
Hsiao, Chien-Nan
Chiang, Chung-Hao
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Metalorganic molecular beam epitaxy;Nitrides;Semiconducting indium compounds;Semiconducting III-V materials
公開日期: 1-七月-2011
摘要: In this paper, high-quality wurtzite indium nitride was epi-grown on sapphire substrates by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. In addition, high-resolution X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy (TEM), Hall Effect, Raman and photoluminescence spectroscopy were carried out to characterize the effect of the growth temperature on structural and optoelectronic properties. It was found that highly c-axis oriented InN epilayer can be obtained by optimizing growth conditions. TEM images reveal that the epitaxially grown InN/GaN interface is sharp, and the spacing of the InN(0 0 0 2) lattice plane is about 0.57 nm. Raman spectra also show a sharp peak at 491 cm(-1) attributed to the E(2)(high) mode of wurtzite InN. These results indicate that the improvement of InN material quality can be achieved using heteroepitaxy on GaN/sapphire templates. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2011.01.047
http://hdl.handle.net/11536/21824
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.047
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 326
Issue: 1
起始頁: 37
結束頁: 41
顯示於類別:期刊論文


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