Full metadata record
DC FieldValueLanguage
dc.contributor.authorKuo, Chia-Haoen_US
dc.contributor.authorHsu, Chia-Weien_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:30:32Z-
dc.date.available2014-12-08T15:30:32Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn1750-0443en_US
dc.identifier.urihttp://dx.doi.org/10.1049/mnl.2011.0090en_US
dc.identifier.urihttp://hdl.handle.net/11536/21819-
dc.description.abstractA novel suspended nanowire (NW) channel thin-film transistor (TFT) with sub-100 nm air gap has been fabricated and characterised. With a simple and low-cost over-etching-time-controlled reactive ion etching technique and a buffered-oxide etch wet-etching process, a suspended NW of 27 nm and an air gap of 10 nm were achieved. The resultant suspended-NW-channel TFTs showed an ultra-low subthreshold swing (52 mV/dec) and considerable hysteresis window (3.7 V). Finally, the impacts of device dimensions on the characteristics of suspended NW TFTs were also investigated.en_US
dc.language.isoen_USen_US
dc.titleCharacterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gapen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/mnl.2011.0090en_US
dc.identifier.journalMICRO & NANO LETTERSen_US
dc.citation.volume6en_US
dc.citation.issue7en_US
dc.citation.spage543en_US
dc.citation.epage545en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000293512800020-
dc.citation.woscount1-
Appears in Collections:Articles


Files in This Item:

  1. 000293512800020.pdf