Title: Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gap
Authors: Kuo, Chia-Hao
Hsu, Chia-Wei
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jul-2011
Abstract: A novel suspended nanowire (NW) channel thin-film transistor (TFT) with sub-100 nm air gap has been fabricated and characterised. With a simple and low-cost over-etching-time-controlled reactive ion etching technique and a buffered-oxide etch wet-etching process, a suspended NW of 27 nm and an air gap of 10 nm were achieved. The resultant suspended-NW-channel TFTs showed an ultra-low subthreshold swing (52 mV/dec) and considerable hysteresis window (3.7 V). Finally, the impacts of device dimensions on the characteristics of suspended NW TFTs were also investigated.
URI: http://dx.doi.org/10.1049/mnl.2011.0090
http://hdl.handle.net/11536/21819
ISSN: 1750-0443
DOI: 10.1049/mnl.2011.0090
Journal: MICRO & NANO LETTERS
Volume: 6
Issue: 7
Begin Page: 543
End Page: 545
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