標題: The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Syu, Yong-En
Liao, Kuo-Hsiao
Chuang, Siang-Lan
Li, Cheng-Hua
Gan, Der-Shin
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
URI: http://hdl.handle.net/11536/21802
http://dx.doi.org/10.1149/2.022202ssl
ISSN: 2162-8742
DOI: 10.1149/2.022202ssl
期刊: ECS SOLID STATE LETTERS
Volume: 1
Issue: 2
起始頁: X1
結束頁: X1
顯示於類別:期刊論文


文件中的檔案:

  1. 000318339500022.pdf