標題: Double-Pattern Textured ZnO:Ga Thin Films Fabricated by an APPJ and an DC Sputtering
作者: Yu, Shu-Hung
Ho, Po-Ching
Yang, Teng-Wei
Bi, Chien-Chung
Yeh, Chih-Hung
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Here, double-pattern textured gallium doped zinc oxide (GZO) films were achieved by inserting organosilicon underlayers deposited from an atmospheric pressure plasma jet (APPJ) between sputtered GZO films and glass substrates. The electro-optical characteristics of the textured GZO films were controlled by the haze of organosilicon underlayers. All GZO films were thermally annealed in high vacuum to improve film quality. Post-annealed textured GZO films exhibited an average optical transmittance of about 80% in a wide range. Hall measurements showed Hall mobility above 26 cm(2)/V-s, carrier concentration around 2.4 x 10(20) cm(-3) and resistivity below 9.91 x 10(-4) Omega-cm. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003203ssl] All rights reserved.
URI: http://hdl.handle.net/11536/21800
http://dx.doi.org/10.1149/2.003203ssl
ISSN: 2162-8742
DOI: 10.1149/2.003203ssl
期刊: ECS SOLID STATE LETTERS
Volume: 1
Issue: 3
起始頁: P48
結束頁: P50
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