標題: Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array
作者: Lo, Chun-Li
Hou, Tuo-Hung
Chen, Mei-Chin
Huang, Jiun-Jia
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Crossbar array;one selector-one resistor (1S1R);read margin;resistive random access memory (RRAM);resistive switching (RS);sneak current
公開日期: 1-Jan-2013
摘要: This paper reports on comprehensive analytical and numerical circuit analyses on the read margin of the one selector-one resistor (1S1R) resistive-switching crossbar array. These analyses are based on the experimental characteristics of the 1S1R cells and provide a valuable insight into their potential for ultrahigh-density data storage. Three read schemes, namely, one bit-line pull-up (One-BLPU), all bit-line pull-up (All-BLPU), and partial bit-line pull-up (Partial-BLPU), are investigated. In contrast to the One-BLPU scheme, the All-BLPU scheme can realize a large crossbar array of 16 Mb, even when the line resistance is nonneg-ligible because the effective resistance at the sneak current path is substantially less sensitive to the array size. Additionally, the Partial-BLPU scheme can be used to reduce power consumption if random read access is desirable. Finally, the effects of line resistance on the read and write margins are discussed.
URI: http://dx.doi.org/10.1109/TED.2012.2225147
http://hdl.handle.net/11536/21793
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2225147
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 1
起始頁: 420
結束頁: 426
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