|標題:||Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array|
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Crossbar array;one selector-one resistor (1S1R);read margin;resistive random access memory (RRAM);resistive switching (RS);sneak current|
|摘要:||This paper reports on comprehensive analytical and numerical circuit analyses on the read margin of the one selector-one resistor (1S1R) resistive-switching crossbar array. These analyses are based on the experimental characteristics of the 1S1R cells and provide a valuable insight into their potential for ultrahigh-density data storage. Three read schemes, namely, one bit-line pull-up (One-BLPU), all bit-line pull-up (All-BLPU), and partial bit-line pull-up (Partial-BLPU), are investigated. In contrast to the One-BLPU scheme, the All-BLPU scheme can realize a large crossbar array of 16 Mb, even when the line resistance is nonneg-ligible because the effective resistance at the sneak current path is substantially less sensitive to the array size. Additionally, the Partial-BLPU scheme can be used to reduce power consumption if random read access is desirable. Finally, the effects of line resistance on the read and write margins are discussed.|
|期刊:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Appears in Collections:||Articles|
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