Title: The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors
Authors: Lee, I-Che
Yang, Po-Yu
Hu, Ming-Jhe
Wang, Jyh-Liang
Tsai, Chun-Chien
Chang, Chia-Tsung
Cheng, Huang-Chung
Department of Electronics Engineering and Institute of Electronics
Keywords: Nanometal-Induced Crystallization;Thin-Film Transistor;Nickel
Issue Date: 1-Jul-2011
Abstract: The effects of active layer thickness and device dimensions on nanometal-induced crystallization (nano-MIC) were studied to determine the electrical characteristics of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with bottom-gate structures. The nano-MIC poly-Si film was obtained via deposition of a 0.4-nm-thick Ni film on the amorphous silicon layer and subsequent annealing at 550 degrees C for 0.5 to 8 h. The EDS revealed a similar to 0.1% Ni concentration in the poly-Si film. The cross-sectional TEM image shows the vertical-grain growth mechanism, where the bottom side of the grain exhibits a larger crytalline area than the top side. Therefore, the field effect mobility of the bottom-gate poly-Si TFTs increases with increased active-amorphous-silicon (a-Si) thickness. Furthermore, the mobility increases when the device dimensions are scaled down. A mechanism for explaining such phenomenon in relation to the nano-MIC bottom-gate poly-Si TFTs was also proposed.
URI: http://dx.doi.org/10.1166/jnn.2011.4338
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.4338
Volume: 11
Issue: 7
Begin Page: 5612
End Page: 5617
Appears in Collections:Articles