標題: In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
作者: Nguyen, H. Q.
Trinh, H. D.
Chang, E. Y.
Lee, C. T.
Wang, Shin Yuan
Yu, H. W.
Hsu, C. H.
Nguyen, C. L.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al2O3;InGaAs;metal-organic chemical vapor deposition (MOCVD);metal-oxide-semiconductor (MOS) capacitor (MOSCAP)
公開日期: 1-Jan-2013
摘要: We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10(6) cm(-2). The performance of the MOSCAPs is comparable to that of In0.53Ga0.47As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D-it values of 5 x 10(11)-2 x 10(12) eV(-1) . cm(-2) in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.
URI: http://dx.doi.org/10.1109/TED.2012.2228201
http://hdl.handle.net/11536/21791
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2228201
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 1
起始頁: 235
結束頁: 240
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