標題: Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
作者: Hu, Vita Pi-Ho
Fan, Ming-Long
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hetero-channel;performance;SRAM;variability
公開日期: 1-Jan-2013
摘要: Optimized threshold voltage (Vt) design to enhance the variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6 T SRAM cells is presented. For low-voltage SRAM cells operating at low Vdd, low-Vt design shows smaller variability, while the design tradeoff between performance and leakage should be considered. For high-performance SRAM cells operating at high Vdd, ultra-thin-body SOI SRAM cells with high-Vt design show smaller variability while sacrificing performance compared with the low-Vt design. Our study indicates that hetero-channel SRAM cells enable high-Vt design and exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications.
URI: http://dx.doi.org/10.1109/TED.2012.2228863
http://hdl.handle.net/11536/21790
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2228863
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 1
起始頁: 147
結束頁: 152
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