Title: Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs
Authors: Yeh, Kuo-Liang
Guo, Jyh-Chyurn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: f(MAX);f(T);multifinger;nanoscale CMOS;narrow width;N F-min;RF noise;R-g
Issue Date: 1-Jan-2013
Abstract: The impact of narrow-width effects on high-frequency performance like f(T), f(MAX), and RF noise parameters, such as NFmin and R-n, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower R-g and higher f(MAX). However, these narrow-OD devices suffer f(T) degradation and higher NFmin, even with the advantage of lower R-g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.
URI: http://dx.doi.org/10.1109/TED.2012.2228196
http://hdl.handle.net/11536/21789
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2228196
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 1
Begin Page: 109
End Page: 116
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