Title: Al2O3 Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon
Authors: Tan, Yew Heng
Yew, Kwang Sing
Lee, Kwang Hong
Chang, Yao-Jen
Chen, Kuan-Neng
Ang, Diing Shenp
Fitzgerald, Eugene A.
Tan, Chuan Seng
Department of Electronics Engineering and Institute of Electronics
Keywords: Germanium (Ge);interface state density;interfacial layer;oxide
Issue Date: 1-Jan-2013
Abstract: The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal-oxide-semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate the effect of temperature on the Ge film quality. Prior to high-k dielectric deposition, various surface treatments are applied on the Ge film to determine the leakage current density using scanning tunneling microscopy. The interface trap density (D-it) and leakage current obtained from the C-V and I-V measurements on the MOSCAP, as well as the threading dislocation density (TDD), show a linear relationship with the thermal cycling temperature. It is found that the Ge epitaxial film that undergoes the highest thermal cycling temperature of 825 degrees C and surface treatment in ultraviolet ozone, followed by germanium oxynitride (GeOxNy) formation, demonstrates the lowest leakage current of similar to 2.3 x 10(-8) A/cm(2) (at -2 V), D-it similar to 3.5 x 10(11) cm(-2)/V, and TDD < 10(7) cm(-2).
URI: http://dx.doi.org/10.1109/TED.2012.2225149
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2225149
Volume: 60
Issue: 1
Begin Page: 56
End Page: 62
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