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dc.contributor.authorLiu, Tao-Chien_US
dc.contributor.authorHuang, Yi-Saen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:30:26Z-
dc.date.available2014-12-08T15:30:26Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://hdl.handle.net/11536/21766-
dc.identifier.urihttp://dx.doi.org/10.1149/2.009302sslen_US
dc.description.abstractWe investigate the cross-interaction in Cu/SnAg/Ni microbumps with a reduced solder thickness of 30 and 10 mu m. The concentration of Ni atoms at the opposite site increased with the decrease in solder-height. A considerable concentration gradient of Ni was detected in 10-mu m microbumps sample, which strongly triggers the diffusion of Ni atoms to the Cu side. The diffused Ni atoms at Cu side form the ternary intermetallic compounds of (Cu,Ni)(6)Sn-5, which possesses a lower free energy than Cu6Sn5 does. Eventually, the growth of the Cu3Sn was inhibited due to the formation of the thermodynamically stable (Cu, Ni) 6Sn5. (C) 2012 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleConcentration Gradient of Ni in Reduced SnAg Thickness in Ni/SnAg/Cu Microbumps during Solid-State Agingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.009302sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.volume2en_US
dc.citation.issue2en_US
dc.citation.spageP15en_US
dc.citation.epageP18en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000318342500005-
dc.citation.woscount0-
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