標題: Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region
作者: Chen, Ming-Jer
Lee, Wei-Han
Huang, Yi-Hui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Matthiessen's rule;metal-oxide-semiconductor field-effect transistors (MOSFETs);mobility;model;scattering;simulation;strain;universal mobility
公開日期: 1-Feb-2013
摘要: Through the experimentally validated inversion-layer mobility simulation, we devise an error-free version of Matthiessen's rule for a single-gate n-channel bulk MOSFET in the universal mobility region. The core of the new rule lies in a semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen's rule as a function of both the lowest subband population and the relative strength of individual mobility components. The model holds under practical conditions (with temperatures up to 400 K) and in a broad range of substrate doping concentrations (10(14) to 10(18) cm(-3)). To make the error-free proposal more general, we elaborate on several issues, including strain, impurity Coulomb scattering, and remote scattering. The thin-film case can be treated accordingly.
URI: http://dx.doi.org/10.1109/TED.2012.2233202
http://hdl.handle.net/11536/21761
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2233202
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 2
起始頁: 753
結束頁: 758
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