標題: Design and Analysis of Robust Tunneling FET SRAM
作者: Chen, Yin-Nien
Fan, Ming-Long
Hu, Vita Pi-Ho
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Band-to-band tunneling;output characteristic;SRAM;tunnel FET (TFET)
公開日期: 1-三月-2013
摘要: With a steep subthreshold slope, tunneling FETs (TFETs) are promising candidates for ultralow-voltage operation compared with conventional MOSFETs. However, the delayed saturation characteristic and the broad soft transition region result in a large crossover region/current in an inverter, thus degrading the hold/read static noise margin (H/RSNM) of TFET SRAM cells. The write-ability and write static noise margin (WSNM) of TFET SRAM cells are constrained by the unidirectional conduction characteristics and large crossover contention of the write access transistor and the holding transistor. In this paper, we present a detailed analysis of TFET circuit switching/output characteristics/performance and the underlying physics. The stability/performance of several TFET SRAM cells are then analyzed/compared using atomistic technology computer-aided design mixed-mode simulations. Finally, a robust 7T driverless (DL) TFET SRAM cell is proposed. The proposed 7T DL TFET SRAM cell, with better output characteristics in single-gate mode, and decoupled read current path from cell storage node and push-pull write action with asymmetrical raised-cell-virtual-ground write-assist, provides a significant improvement in hold, read, and write stability and performance.
URI: http://dx.doi.org/10.1109/TED.2013.2239297
http://hdl.handle.net/11536/21749
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2239297
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 3
起始頁: 1092
結束頁: 1098
顯示於類別:期刊論文


文件中的檔案:

  1. 000316820000028.pdf