標題: Statistical Characterization and Modeling of the Temporal Evolutions of Delta V-t Distribution in NBTI Recovery in Nanometer MOSFETs
作者: Chiu, Jung-Piao
Liu, Yu-Heng
Hsieh, Hung-Da
Li, Chi-Wei
Chen, Min-Cheng
Wang, Tahui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Activation energy;charge emission time;negative bias temperature instability;recovery;statistical model
公開日期: 1-三月-2013
摘要: NBTI trapped charge characteristics and recovery mechanisms are examined by a statistical study of individual trapped charge emissions in nanoscale HfSiON/metal gate pMOSFETs. We measure individual trapped charge emission times in NBTI recovery in a large number of devices. The characteristic time distributions of the first three emitted holes are obtained. The distributions can be well modeled by using a thermally-assisted tunnel (ThAT) detrapping model. NBTI trapped charge energy and spatial distributions and its activation energy distribution in the ThAT model are discussed and extracted. Based on the ThAT model and measured result of single-charge induced V-t shifts, we develop a statistical NBTI recovery Delta V-t evolution model. Our model can well reproduce the temporal evolutions of a Delta V-t distribution in a number of NBTI stressed nanometer MOSFETs in relaxation.
URI: http://dx.doi.org/10.1109/TED.2013.2240390
http://hdl.handle.net/11536/21746
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2240390
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 3
起始頁: 978
結束頁: 984
顯示於類別:期刊論文


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  1. 000316820000011.pdf