標題: Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
作者: Dai, Chih-Hao
Chang, Ting-Chang
Chu, Ann-Kuo
Kuo, Yuan-Jui
Ho, Szu-Han
Hsieh, Tien-Yu
Lo, Wen-Hung
Chen, Ching-En
Shih, Jou-Miao
Chung, Wan-Lin
Dai, Bai-Shan
Chen, Hua-Mao
Xia, Guangrui
Cheng, Osbert
Huang, Cheng Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 4-Jul-2011
摘要: This paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type metal-oxide-semiconductor field effect transistors. It was found that the behavior of GIDL current during CHCS is dependent upon the interfacial layer (IL) oxide thickness of high-k/metal-gate stacks. For a thinner IL, the GIDL current gradually decreases during CHCS, a result contrary to that found in a device with thicker IL. Based on the variation of GIDL current at different stress conditions, the trap-assisted band-to-band hole injection model is proposed to explain the different behavior of GIDL current for different IL thicknesses. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608241]
URI: http://dx.doi.org/10.1063/1.3608241
http://hdl.handle.net/11536/21737
ISSN: 0003-6951
DOI: 10.1063/1.3608241
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 1
結束頁: 
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