標題: Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations
作者: Shi, Jin-Wei
Yan, Jhih-Cheng
Wun, Jhih-Min
Chen, Jason
Yang, Ying-Jay
光電工程學系
Department of Photonics
關鍵字: Semiconductor lasers;vertical-cavity surface-emitting;lasers (VCSELs).
公開日期: 1-三月-2013
摘要: We demonstrate novel structures of a vertical-cavity surface-emitting laser (VCSEL) for high-speed (similar to 40 Gbit/s) operation with ultralow power consumption performance. Downscaling the size of oxide aperture of VCSELs is one of the most effective ways to reduce the power consumption during high-speed operation. However, such miniaturized oxide apertures (similar to 2 mu m diameter) in VCSELs will result in a large differential resistance, optical single-mode output, and a small maximum output power (< 1 mW). These characteristics seriously limit the maximum electrical-to-optical (E-O) bandwidth and device reliability. By the use of the oxide-relief and Zn-diffusion techniques in our demonstrated 850-nm VCSELs, we can not only release the burden imposed on downscaling the current-confined aperture for high speed with low-power consumption performance, but can also manipulate the number of optical modes inside the cavity to maximize the E-O bandwidth and product of bit-rate transmission distance in an OM4 fiber. State-of-the-art dynamic performances at both room temperature and 85 degrees C operations can be achieved by the use of our device. These include extremely high D-factors (similar to 13.5 GHz/mA(1/2)), as well as record-low energy-to-data ratios (EDR: 140 fJ/bit) at 34 Gbit/s operation, and error-free transmission over a 0.8-km OM4 multimode fiber with a record-low energy-to-data distance ratio (EDDR: 175.5 fJ/bit. km) at 25 Gbit/s.
URI: http://dx.doi.org/10.1109/JSTQE.2012.2210863
http://hdl.handle.net/11536/21736
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2012.2210863
期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume: 19
Issue: 2
結束頁: 
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