標題: Effect of Strained k . p Deformation Potentials on Hole Inversion-Layer Mobility
作者: Chen, Ming-Jer
Lee, Chien-Chih
Chen, Wan-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Bir-Pikus;deformation potential;hole;k . p;metal-oxide-semiconductor field-effect transistors (MOSFETs);mobility;simulation;strain;stress;tight-binding
公開日期: 1-Apr-2013
摘要: In the literature dedicated to strained p-type metal-oxide-semiconductor field-effect transistor inversion-layer mobility calculation via a k . p valence-band structure, three key strain-related material parameters, namely, the Bir-Pikus deformation potentials a(upsilon), b, and d, were widespread in magnitude. To improve such large discrepancies, in this paper, we conduct sophisticated calculations on < 110 >/(001) and < 110 >/(110) hole inversion-layer mobility for gigapascal-level uniaxial stresses along each of three crystallographic directions. The screening effect on surface roughness scattering is taken into account. We find that, to affect the calculated hole mobility enhancement, a(upsilon) is weak, b is moderate, and d is strong, particularly for the uniaxial compressive stress along the < 110 > direction. This provides experimental guidelines for an optimal determination of the primary factor, i.e., d, and the secondary factor, i.e., b, with the commonly used values for a(upsilon). The result remains valid for varying surface roughness parameters and models and is supported by recent first-principles and tight-binding calculations. Thus, the strained k . p valence-band structure with the optimized deformation potentials can ensure the accuracy of the calculated transport properties of 2-D hole gas under stress.
URI: http://dx.doi.org/10.1109/TED.2013.2244896
http://hdl.handle.net/11536/21719
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2244896
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 4
起始頁: 1365
結束頁: 1371
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