標題: Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrate
作者: Chen, Che-Wei
Chung, Cheng-Ting
Tzeng, Ju-Yuan
Li, Pin-Hui
Chang, Pang-Sheng
Chien, Chao-Hsin
Luo, Guang-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Body-tied;germanium;multifin field-effect transistors (FinFETs);silicon p(+)-Ge/n-Si heterojunction;n(+)-Ge/p-Si heterojunction
公開日期: 1-四月-2013
摘要: We demonstrate the characteristics of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction diodes formed by heteroepitaxial Ge grown on Si leading to high performance and very low leakage current. The ON/OFF current ratio of the p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction was >10(7) and >10(6), respectively. The OFF current density was extremely low at <10 mu A/cm(2) for the p(+)-Ge/n-Si formed with different implantation energies of 10 similar to 40 KeV and similar to 20 mu A/cm(2) for the n(+)-Ge/p-Si with different implantation energies of 20 similar to 50 KeV at a reverse bias of vertical bar V-R vertical bar = +/- 1 V, respectively. Both p and n-Ge channel multifin field-effect transistors (FinFETs) were formed by a mesa structure using these p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunctions. A high-kappa/metal gate stack was employed. The body-tied Ge multifin FinFET with a fin width (W-Fin) of similar to 40 nm, and the channel length (L-Channel) was 150 nm for p-FinFET and of 110 nm for n-FinFET, exhibiting a driving current of 174 mu A/mu m at V-G = -2 V and 102 mu A/mu m at V-G = 2 V, respectively. This is the first experimental demonstration of a body-tied high mobility Ge channel multifin FinFET using a top-down approach.
URI: http://dx.doi.org/10.1109/TED.2013.2247766
http://hdl.handle.net/11536/21718
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2247766
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 4
起始頁: 1334
結束頁: 1341
顯示於類別:期刊論文


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