標題: Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Wu, Hsing-Hua
Chen, Kai-Huang
Chen, Jung-Hui
Young, Tai-Fa
Chu, Tian-Jian
Chen, Jian-Yu
Pan, Chih-Hung
Su, Yu-Ting
Syu, Yong-En
Tung, Cheng-Wei
Chang, Geng-Wei
Chen, Min-Chen
Huang, Hui-Chun
Tai, Ya-Hsiang
Gan, Der-Shin
Wu, Jia-Jie
Hu, Ying
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Nonvolatile memory;resistive switching;silicon oxide;zinc
公開日期: 1-Apr-2013
摘要: To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
URI: http://dx.doi.org/10.1109/LED.2013.2248075
http://hdl.handle.net/11536/21715
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2248075
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 4
起始頁: 511
結束頁: 513
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