標題: Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution
作者: Chou, K. I.
Cheng, C. H.
Zheng, Z. W.
Liu, Ming
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Flexible electronics;GeOx;resistive random access memory (RRAM);TiOy
公開日期: 1-Apr-2013
摘要: Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
URI: http://dx.doi.org/10.1109/LED.2013.2243814
http://hdl.handle.net/11536/21713
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2243814
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 4
起始頁: 505
結束頁: 507
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