|標題:||Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution|
|作者:||Chou, K. I.|
Cheng, C. H.
Zheng, Z. W.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Flexible electronics;GeOx;resistive random access memory (RRAM);TiOy|
|摘要:||Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|
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