標題: Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
作者: Chu, Tian-Jian
Chang, Ting-Chang
Tsai, Tsung-Ming
Wu, Hsing-Hua
Chen, Jung-Hui
Chang, Kuan-Chang
Young, Tai-Fa
Chen, Kai-Hsang
Syu, Yong-En
Chang, Geng-Wei
Chang, Yao-Feng
Chen, Min-Chen
Lou, Jyun-Hao
Pan, Jhih-Hong
Chen, Jian-Yu
Tai, Ya-Hsiang
Ye, Cong
Wang, Hao
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Forming process;hafnium oxide (HfO2);nonvolatile memory;resistance switching
公開日期: 1-Apr-2013
摘要: In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.
URI: http://dx.doi.org/10.1109/LED.2013.2242843
http://hdl.handle.net/11536/21712
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2242843
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 4
起始頁: 502
結束頁: 504
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