標題: In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories
作者: Huang, Yu-Ting
Yu, Shih-Ying
Hsin, Cheng-Lun
Huang, Chun-Wei
Kang, Chen-Fang
Chu, Fu-Hsuan
Chen, Jui-Yuan
Hu, Jung-Chih
Chen, Lien-Tai
He, Jr-Hau
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 16-Apr-2013
摘要: Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.
URI: http://dx.doi.org/10.1021/ac303528m
http://hdl.handle.net/11536/21668
ISSN: 0003-2700
DOI: 10.1021/ac303528m
期刊: ANALYTICAL CHEMISTRY
Volume: 85
Issue: 8
起始頁: 3955
結束頁: 3960
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