標題: Growth and characterization of topological insulator Bi2Se3 thin films on SrTiO3 using pulsed laser deposition
作者: Phuoc Huu Le
Wu, Kaung Hsiung
Luo, Chih Wei
Leu, Jihperng
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Bi2Se3;Topological insulator;Thin film;Pulsed laser deposition;SrTiO3 substrate
公開日期: 1-五月-2013
摘要: Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (T-S) from 120 to 350 degrees C. Amorphous films grown at T-S < 180 degrees C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at T-S >= 180 degrees C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 degrees C. Thickness-dependent characteristics were also investigated for optimized Bi2Se3 films deposited at T-S = 230 degrees C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results. (C) 2013 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2013.01.104
http://hdl.handle.net/11536/21653
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.01.104
期刊: THIN SOLID FILMS
Volume: 534
Issue: 
起始頁: 659
結束頁: 665
顯示於類別:期刊論文


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