標題: Super-high density Si quantum dot thin film utilizing a gradient Si-rich oxide multilayer structure
作者: Kuo, Kuang-Yang
Huang, Pin-Ruei
Lee, Po-Tsung
光電工程學系
Department of Photonics
公開日期: 17-May-2013
摘要: A gradient Si-rich oxide multilayer (GSRO-ML) deposition structure is proposed to achieve super-high density Si quantum dot (QD) thin film formation while preserving QD size controllability for better photovoltaic properties. Our results indicate that the Si QD thin film using a GSRO-ML structure can efficiently increase the QD density and control the QD size. Its optical properties clearly promise the capability of effective bandgap engineering even though these QDs are closely formed. The Si QD thin film using a GSRO-ML structure obviously reveals better electro-optical properties than those using a [silicon dioxide/silicon-rich oxide] multilayer ([SiO2/SRO]-ML) structure owing to the better optical absorption and carrier transport properties. Therefore, we successfully demonstrate that our proposed GSRO-ML structure has great potential for application in solar cells integrating Si QD thin films.
URI: http://dx.doi.org/10.1088/0957-4484/24/19/195701
http://hdl.handle.net/11536/21642
ISSN: 0957-4484
DOI: 10.1088/0957-4484/24/19/195701
期刊: NANOTECHNOLOGY
Volume: 24
Issue: 19
結束頁: 
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