Title: Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Authors: Chen, Te-Chih
Chang, Ting-Chang
Hsieh, Tien-Yu
Lu, Wei-Siang
Jian, Fu-Yen
Tsai, Chih-Tsung
Huang, Sheng-Yao
Lin, Chia-Sheng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 11-Jul-2011
Abstract: This letter investigates the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress. The larger V(t) shift under positive AC gate-bias stress when compared to DC operation indicates that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period. In contrast, the degradation behavior under illuminated negative gate-bias stress exhibits the opposite degradation tendency. Since electron and hole trapping are the dominant degradation mechanisms under positive and illuminated negative gate-bias stress, respectively, the different degradation tendencies under AC/DC operation can be attributed to the different trapping efficiency of electrons and holes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609873]
URI: http://dx.doi.org/10.1063/1.3609873
http://hdl.handle.net/11536/21637
ISSN: 0003-6951
DOI: 10.1063/1.3609873
Journal: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 2
End Page: 
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