Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHo, Po-Chingen_US
dc.contributor.authorWu, Chi-Weien_US
dc.contributor.authorWu, Chin-Jyien_US
dc.contributor.authorChang, Chia-Chiangen_US
dc.date.accessioned2014-12-08T15:30:09Z-
dc.date.available2014-12-08T15:30:09Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-60768-317-9en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/21602-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3701542en_US
dc.description.abstractUsing simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00x10(-4) was achieved at 8 at% gallium doping. Xray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.en_US
dc.language.isoen_USen_US
dc.titleStructural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jeten_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3701542en_US
dc.identifier.journalWIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13en_US
dc.citation.volume45en_US
dc.citation.issue7en_US
dc.citation.spage221en_US
dc.citation.epage229en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000316687500024-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000316687500024.pdf