標題: Structural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jet
作者: Chang, Kow-Ming
Ho, Po-Ching
Wu, Chi-Wei
Wu, Chin-Jyi
Chang, Chia-Chiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00x10(-4) was achieved at 8 at% gallium doping. Xray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.
URI: http://hdl.handle.net/11536/21602
http://dx.doi.org/10.1149/1.3701542
ISBN: 978-1-60768-317-9
ISSN: 1938-5862
DOI: 10.1149/1.3701542
期刊: WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13
Volume: 45
Issue: 7
起始頁: 221
結束頁: 229
Appears in Collections:Conferences Paper


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