標題: Cu(In,Ga)Se-2 thin films preparation from CuGa-In metallic alloy and Se thin film by atmosphere pressure plasma deposition system
作者: Chang, Kow-Ming
Ho, Po-Ching
Yang, Kuo-Hui
Wu, Shen-Bin
Liu, Chi-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: An atmosphere pressure plasma (APP) deposition system with dielectric barrier discharge (DBD) is proposed for deposition selenium thin films on CuGa-In metallic precursors and transformed into Cu(In,Ga)Se-2 (CIGS) thin films by rapid thermal process (RTP). Morphologies and thicknesses of selenium thin films deposited on In/CuGa/Mo/SLG can be affected by plasma power which also has impact on crystallinity of CIGS absorber. With the increase in plasma power, CIGS grains tend to distribute non-uniformly. Plasma power of 100W has the smallest FWHM of the main peak (112). Insufficient selenium incorporation into precursors result in undesired phases such as Cu3Se2, Cu2Se and separation phase, CuGaSe2 compound. Compositions of optimal selenized CIGS thin film deposited by scanning 180times are Cu/(In+Ga) = 1.03 and Ga/(In+Ga) = 0.24.
URI: http://hdl.handle.net/11536/21601
http://dx.doi.org/10.1149/1.3701534
ISBN: 978-1-60768-317-9
ISSN: 1938-5862
DOI: 10.1149/1.3701534
期刊: WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13
Volume: 45
Issue: 7
起始頁: 143
結束頁: 151
Appears in Collections:Conferences Paper


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