標題: Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability
作者: Shen, Chang-Hong
Shieh, Jia-Min
Huang, Jung Y.
Kuo, Hao-Chung
Hsu, Chih-Wei
Dai, Bau-Tong
Lee, Ching-Ting
Pan, Ci-Ling
Yang, Fu-Liang
光電工程學系
Department of Photonics
公開日期: 18-七月-2011
摘要: We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (similar to 3 x 10(15) cm(-3)). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615650]
URI: http://dx.doi.org/10.1063/1.3615650
http://hdl.handle.net/11536/21548
ISSN: 0003-6951
DOI: 10.1063/1.3615650
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 3
結束頁: 
顯示於類別:期刊論文


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