標題: THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS
作者: LOU, YS
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1995
摘要: The effects of semiconductor heavy doping on the I-V characteristics and the specific contact resistivity rho(c) of semiconductor-metal ohmic contacts have been theoretically studied by incorporating the band-edge-tailing and impurity band effects. The Fermi level and the effective conduction band edge have been recalculated to determine the electron population and the bandgap narrowing. When the available electrons with higher transmission probability, which dominate the tunneling process, have been reduced by the presence of an impurity band, the tunneling current density becomes lower and hence the specific contact resistivity becomes higher for the case with the impurity band than that without the impurity band. Considering the physical properties inherent in a heavily-doped semiconductor, it is possible to explain the deviations of the experimental data from the theoretical results obtained from the conventionally used tunneling theory for the ohmic contacts. Furthermore, by comparing the simulated results and the measured rho(c) data deduced from the Al and Ti contacts on both doping types of the Si-substrate, satisfactory agreements have been obtained.
URI: http://dx.doi.org/10.1016/0038-1101(94)E0048-J
http://hdl.handle.net/11536/2153
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)E0048-J
期刊: SOLID-STATE ELECTRONICS
Volume: 38
Issue: 1
起始頁: 163
結束頁: 169
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QC42000024.pdf