Title: Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
Authors: Shu, G. W.
Lin, J. Y.
Jian, H. T.
Shen, J. L.
Wang, S. C.
Chou, C. L.
Chou, W. C.
Wu, C. H.
Chiu, C. H.
Kuo, H. C.
Department of Electrophysics
Department of Photonics
Issue Date: 14-Jan-2013
Abstract: Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America
URI: http://hdl.handle.net/11536/21466
ISSN: 1094-4087
Volume: 21
Issue: 1
Begin Page: A123
End Page: A130
Appears in Collections:Articles