標題: Effects of (002) beta-Ta barrier on copper chemical mechanical polishing behavior
作者: Wang, Yu-Sheng
Chen, Kei-Wei
Cheng, Min-Yuan
Lee, Wen-Hsi
Wang, Ying-Lang
材料科學與工程學系
光電學院
Department of Materials Science and Engineering
College of Photonics
關鍵字: Semiconductors;Barriers;Chemical mechanical polishing
公開日期: 1-二月-2013
摘要: This study proposes that the corrosion resistance of copper film correlates well with underlying barrier's orientation. To test the hypothesis, we performed X-ray diffraction, conducted copper removal rate experiments after chemical mechanical polishing, and tested static potentiodynamic polarization. The results all show that copper deposited on strongly (002) oriented beta-Ta barrier layer demonstrated better chemical resistance against surface reaction with the slurry for strong copper (111) orientation. The findings were consistent with the result of the chronoamperometric test at 0.3 V in which the more passive film formed on the composite film with (002) beta-Ta underlying barrier. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.06.017
http://hdl.handle.net/11536/21458
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.06.017
期刊: THIN SOLID FILMS
Volume: 529
Issue: 
起始頁: 435
結束頁: 438
顯示於類別:期刊論文


文件中的檔案:

  1. 000315928000094.pdf