標題: Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
作者: Tseng, Hsueh-Chih
Chang, Ting-Chang
Cheng, Kai-Hung
Huang, Jheng-Jie
Chen, Yu-Ting
Jian, Fu-Yen
Sze, Simon M.
Tsai, Ming-Jinn
Chu, Ann-Kuo
Wang, Ying-Lang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ReRAM;BON;BON:Gd;Interface type;NDR
公開日期: 1-二月-2013
摘要: This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.09.031
http://hdl.handle.net/11536/21455
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.09.031
期刊: THIN SOLID FILMS
Volume: 529
Issue: 
起始頁: 389
結束頁: 393
顯示於類別:期刊論文


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  1. 000315928000084.pdf