Title: Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
Authors: Tseng, Hsueh-Chih
Chang, Ting-Chang
Cheng, Kai-Hung
Huang, Jheng-Jie
Chen, Yu-Ting
Jian, Fu-Yen
Sze, Simon M.
Tsai, Ming-Jinn
Chu, Ann-Kuo
Wang, Ying-Lang
Department of Electronics Engineering and Institute of Electronics
Keywords: ReRAM;BON;BON:Gd;Interface type;NDR
Issue Date: 1-Feb-2013
Abstract: This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.09.031
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.09.031
Volume: 529
Begin Page: 389
End Page: 393
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