標題: Nonvolatile floating gate memory characteristics of Sb2Te-SiO2 nanocomposite thin films
作者: Yang, Cheng-Hsun
Chiang, Kuo-Chang
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Chalcogenides;Sb2Te;Nanocomposite;Nonvolatile floating gate memory
公開日期: 1-二月-2013
摘要: Nonvolatile floating gate memory (NFGM) device composed of Sb2Te nanocrystals (NCs) as the charge-storage traps embedded in SiO2 matrix was prepared by the target-attachment sputtering method at various nitrogen (N-2) incorporation conditions. Via post annealing at 450 degrees C in ambient air, the sample prepared at the condition N-2/Ar=0.1 exhibited a maximum memory window (Delta V-FB) shift=4.4 V and charge density=4.2x10(12) cm(-2) under +/- 7 V gate voltage sweep. N-2 incorporation not only reduced the Sb2Te NC size to about 5 nm, but also suppressed the oxygen defects and antimony oxides in the sample. Feasibility of the Sb2Te chalcogenide NCs to NFGM fabrication with the simplified process and relatively low annealing temperature is demonstrated. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.07.135
http://hdl.handle.net/11536/21454
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.07.135
期刊: THIN SOLID FILMS
Volume: 529
Issue: 
起始頁: 263
結束頁: 268
顯示於類別:期刊論文


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  1. 000315928000058.pdf