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dc.contributor.authorYang, Jyun-Baoen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHuang, Jheng-Jieen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorYang, Po-Chunen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorTseng, Hsueh-Chihen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2014-12-08T15:29:55Z-
dc.date.available2014-12-08T15:29:55Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.10.026en_US
dc.identifier.urihttp://hdl.handle.net/11536/21452-
dc.description.abstractThis study investigates bipolar resistance switching memory in a fabricated Pt/GaOx/TiN device. Gallium oxide sputtered in ambient Ar shows a change in resistance ratio of two orders of magnitude. The enhancement of resistance ratio is also observed in the gallium oxide layer when deposited in ambient Ar/O-2. The X-ray photoelectron spectroscopy analysis shows that this gallium oxide in ambient Ar/O-2 can reduce the number of defects and enhance the stability of switching behavior. An analysis of current transport mechanism in the high resistance state indicates that the larger effective thickness can be attributed to the higher oxygen concentration, and can increase the resistance value of the high resistance state. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectGallium oxideen_US
dc.subjectOxygen vacanciesen_US
dc.titleResistive switching characteristics of gallium oxide for nonvolatile memory applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2012.10.026en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume529en_US
dc.citation.issueen_US
dc.citation.spage200en_US
dc.citation.epage204en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315928000045-
dc.citation.woscount3-
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