標題: Resistive switching characteristics of gallium oxide for nonvolatile memory application
作者: Yang, Jyun-Bao
Chang, Ting-Chang
Huang, Jheng-Jie
Chen, Shih-Ching
Yang, Po-Chun
Chen, Yu-Ting
Tseng, Hsueh-Chih
Sze, Simon M.
Chu, Ann-Kuo
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;Gallium oxide;Oxygen vacancies
公開日期: 1-二月-2013
摘要: This study investigates bipolar resistance switching memory in a fabricated Pt/GaOx/TiN device. Gallium oxide sputtered in ambient Ar shows a change in resistance ratio of two orders of magnitude. The enhancement of resistance ratio is also observed in the gallium oxide layer when deposited in ambient Ar/O-2. The X-ray photoelectron spectroscopy analysis shows that this gallium oxide in ambient Ar/O-2 can reduce the number of defects and enhance the stability of switching behavior. An analysis of current transport mechanism in the high resistance state indicates that the larger effective thickness can be attributed to the higher oxygen concentration, and can increase the resistance value of the high resistance state. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.10.026
http://hdl.handle.net/11536/21452
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.10.026
期刊: THIN SOLID FILMS
Volume: 529
Issue: 
起始頁: 200
結束頁: 204
顯示於類別:期刊論文


文件中的檔案:

  1. 000315928000045.pdf