標題: HfO2 nanocrystal memory on SiGe channel
作者: Lin, Yu-Hsien
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hafnium oxide;Nanocrystals;Nonvolatile memories;Flash memory;SiGe channel
公開日期: 1-Feb-2013
摘要: This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance. (C) 2012 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2012.10.009
http://hdl.handle.net/11536/21443
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.10.009
期刊: SOLID-STATE ELECTRONICS
Volume: 80
Issue: 
起始頁: 5
結束頁: 9
Appears in Collections:Articles


Files in This Item:

  1. 000315838000002.pdf