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dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorWu, Hsing-Huaen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Geng-Weien_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorLiu, Guan-Ruen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorPan, Jhih-Hongen_US
dc.contributor.authorChen, Jian-Yuen_US
dc.contributor.authorTung, Cheng-Weien_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:29:51Z-
dc.date.available2014-12-08T15:29:51Z-
dc.date.issued2013-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2241725en_US
dc.identifier.urihttp://hdl.handle.net/11536/21407-
dc.description.abstractTraditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.en_US
dc.language.isoen_USen_US
dc.subjectFilamenten_US
dc.subjectresistive switchen_US
dc.subjectsilicon oxideen_US
dc.subjectZnen_US
dc.titleCharacteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2241725en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue3en_US
dc.citation.spage399en_US
dc.citation.epage401en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000315723000023-
dc.citation.woscount19-
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