標題: Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Wu, Hsing-Hua
Chen, Jung-Hui
Syu, Yong-En
Chang, Geng-Wei
Chu, Tian-Jian
Liu, Guan-Ru
Su, Yu-Ting
Chen, Min-Chen
Pan, Jhih-Hong
Chen, Jian-Yu
Tung, Cheng-Wei
Huang, Hui-Chun
Tai, Ya-Hsiang
Gan, Der-Shin
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Filament;resistive switch;silicon oxide;Zn
公開日期: 1-Mar-2013
摘要: Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.
URI: http://dx.doi.org/10.1109/LED.2013.2241725
http://hdl.handle.net/11536/21407
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2241725
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 3
起始頁: 399
結束頁: 401
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