|標題:||Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|關鍵字:||Filament;resistive switch;silicon oxide;Zn|
|摘要:||Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|
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